transientenhanceddiffusion

由 JM Poate 著作 · 1995 · 被引用 31 次 — Experimental and theoretical studies are presented which help elucidate the mechanisms of transient enhanced diffusion of B in Si following ion implantation ...

... Transient Enhanced Diffusion ... Ion implantation technology induce silicon lattice damage causing transient enhanced diffusion (TED) by releasing excess point ...

由 SC Jain 著作 · 2002 · 被引用 299 次 — The enhanced diffusion is temporary, on annealing the sample a second time after saturation, enhanced diffusion does not occur. It is therefore ...

由 AT FIORY 著作 · 被引用 8 次 — The B and P species exhibit tran- sient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction ...

由 PA Stolk 著作 · 被引用 891 次 — Implanted B and P dopants in Si exhibit transient enhanced diffusion TED during annealing which ... keV 10B before and after transient enhanced diffusion at 800 ° ...

We obtained experimental transient enhanced diffusion profiles of boron, arsenic, and phosphorous over a wide range of process conditions. We analyzed these ...

Generally, enhanced diffusion is caused by point defects above the thermodynamic equilibrium. The large amount of excess point defects increases the dopant's ...

由 B Baccus 著作 · 1992 · 被引用 15 次 — Abstract. Transient-enhanced diffusion due to annealing of ion-implantation damage is analysed as a function of temperature. In particular, the considerable ...

TED is the rapid, damage-enhanced diffusion of dopants in silicon that occurs in the first anneals following ion implantation. The instantaneous enhancement in ...